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| MP4513 TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) MP4513 High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. * * * * * Package with heat sink isolated to lead (SIP 12 pin) High collector power dissipation (4 devices operation) : PT = 5 W (Ta = 25C) High collector current: IC (DC) = 5 A (max) High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 3 A) Diode included for absorbing fly-back voltage. Industrial Applications Unit: mm Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current Collector power dissipation (1 device operation, Ta = 25C) Collector power dissipation (4 devices operation) Isolation voltage Junction temperature Storage temperature range Ta = 25C Tc = 25C PT VIsol Tj Tstg DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Rating 100 100 5 5 8 0.1 3.0 5.0 W 25 1000 150 -55 to 150 V C C Unit V V V A A W JEDEC JEITA TOSHIBA 2-32B1A Weight: 6.0 g (typ.) Array Configuration 2 3 4 9 10 11 1 5 8 12 6 R1 R2 R1 5 k R2 150 7 1 2002-11-20 MP4513 Thermal Characteristics Characteristics Thermal resistance of junction to ambient (4 devices operation, Ta = 25C) Thermal resistance of junction to case (4 devices operation, Tc = 25C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) Rth (j-c) 5.0 C/W Symbol Max Unit Rth (j-a) 25 C/W TL 260 C Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter Base-emitter Symbol ICBO ICEO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton Input Switching time Storage time tstg IB1 20 s Test Condition VCB = 100 V, IE = 0 A VCE = 100 V, IB = 0 A VEB = 5 V, IC = 0 A IC = 1 mA, IE = 0 A IC = 30 mA, IB = 0 A VCE = 3 V, IC = 0.5 A VCE = 3 V, IC = 3 A IC = 3 A, IB = 12 mA IC = 3 A, IB = 12 mA VCE = 3 V, IC = 0.5 A VCB = 10 V, IE = 0 A, f = 1 MHz Min 0.3 100 100 1000 1000 Typ. 10 40 0.5 Max 10 10 2.0 2.0 2.5 Unit A A mA V V Saturation voltage V MHz pF Transition frequency Collector output capacitance Turn-on time IB1 IB2 Output 10 4.0 s IB2 VCC = 30 V 2.5 Fall time tf IB1 = -IB2 = 12 mA, duty cycle 1% Emitter-Collector Diode Ratings and Characteristics (Ta = 25C) Characteristics Forward current Surge current Forward voltage Reverse recovery time Reverse recovery charge Symbol IFM IFSM VF trr Qrr t = 1 s, 1 shot IF = 1 A, IB = 0 A IF = 5 A, VBE = -3 V, dIF/dt = -50 A/s Test Condition Min Typ. 1.1 3.0 40 Max 5 8 1.8 Unit A A V s C 2 2002-11-20 MP4513 Flyback-Diode Rating and Characteristics (Ta = 25C) Characteristics Forward current Reverse current Reverse voltage Forward voltage Symbol IFM IR VR VF VR = 100 V IR = 100 A IF = 1 A Test Condition Min 100 Typ. Max 3 0.4 1.8 Unit A A V V 3 2002-11-20 MP4513 IC - VCE 10 Common emitter 8 8 5 3 6 2 1 4 0.5 0.3 2 IB = 0.1 mA 0 0 0 2 4 6 8 10 12 0 0 0.8 0.2 Tc = 25C 8 Common emitter VCE = 3 V IC - VBE (A) (A) 6 IC Collector current Collector current IC 4 Tc = 100C 2 25 -55 1.6 2.4 3.2 4.0 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) hFE - IC 30000 Common emitter 10000 VCE = 3 V 2.4 Tc = 100C VCE - IB (V) 2.0 IC = 5 A 1.6 3 2 1 0.1 hFE 5000 3000 25 DC current gain -55 1000 500 300 Collector-emitter voltage VCE 1.2 0.8 0.4 Common emitter Tc = 25C 0 0.03 0.1 0.3 1 3 10 30 100 100 0.03 0.1 0.3 1 3 10 30 Collector current IC (A) Base current IB (mA) VCE (sat) - IC 10 10 IC/IB = 250 VBE (sat) - IC Base-emitter saturation voltage VBE (sat) (V) Common emitter 5 3 Tc = -55C 25 100 IC/IB = 250 Collector-emitter saturation voltage VCE (sat) (V) Common emitter 5 3 1 25 0.5 0.3 0.1 100 Tc = -55C 1 0.5 0.3 0.1 0.3 1 3 10 0.3 1 3 10 Collector current IC (A) Collector current IC (A) 4 2002-11-20 MP4513 rth - tw 300 Curves should be applied in thermal 100 limited area. (single nonrepetitive pulse) Below figure show thermal resistance per 1 unit versus pulse width. (1) 10 5 3 -No heat sink and attached on a circuit board(1) 1 device operation (2) 2 devices operation (3) 3 devices operation Circuit board (4) 4 devices operation 0.01 0.1 1 10 100 1000 (3) (2) (4) Transient thermal resistance rth (C/W) 50 30 1 0.3 0.001 Pulse width tw (s) Safe Operating Area 20 10 5 IC max (pulsed)* 100 s* 10 ms* 1 ms* 1 0.5 0.3 8 PT - Ta (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation Attached on a circuit board (W) PT 6 (4) (3) 4 (2) (1) 2 (A) Total power dissipation 3 IC Collector current Circuit board 0.1 *: Single nonrepetitive pulse Tc = 25C 0.05 Curves must be derated linearly VCEO max with increase in temperature. 0.03 3 10 30 100 1 0 0 40 80 120 160 200 Ambient temperature Ta (C) 300 Collector-emitter voltage VCE (V) Tj - PT 160 (C) Junction temperature increase Tj (1) 120 (2) (3) (4) Attached on a circuit board 80 40 Circuit board (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation 2 4 6 8 10 0 0 Total power dissipation PT (W) 5 2002-11-20 MP4513 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-11-20 |
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